Semiconductor ion implantation

    Semiconductor ion implantation is a high and new technology for material surface modification. It has been widely used in the surface modification of semiconductor materials, metal, ceramic, polymer and so on. In the modern manufacturing of large-scale integrated circuits, it can be said to be an indispensable means.

                                     

Basic principles:

An ion beam with an energy level of 100keV is incident into the material, the ion beam and the atom or molecule in the material will have a series of physical and chemical interactions. The incident ion loses energy gradually, finally stays in the material, and causes the change of the surface composition, structure and property of the material, thus optimizing the surface of the material. Performance, or get some new excellent performance.

The advantage of ion implantation is that it can accurately control the total dose, depth distribution and surface uniformity of the impurity, and it is a low temperature process (to prevent the re diffusion of the original impurities, etc.), and can also realize the self alignment technology (to reduce the capacitance effect).

As a material surface engineering technology, ion implantation technology has some unique advantages which are difficult to achieve by other conventional surface treatment technologies.

* pure pollution-free surface treatment technology

* it does not need to be carried out under high temperature without heat activation, and it will not change the size and surface finish of the workpiece.

There is no exfoliation between the matrix and the matrix

* No further machining and heat treatment after ion implantation